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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1762 APPLICATIONS For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage INCH Collector -emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -60 -50 -5 -3 -4.5 UNIT V V V A A Collector current Collector current-peak Ta=25ae 2.0 W 25 150 -55~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1185 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50|I A; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 |I A IEBO Emitter cut-off current hFE fT DC current gain VEB=-4V; IC=0 -1.0 |I A IC=-500mA ; VCE=-3V 60 Transition frequency COB Collector output capacitance hFE Classifications D 60-120 E 100-200 HAN INC F 160-320 SEM GE IC=-0.5A; VCE=-5V IE=0;f=1MHz ; VCB=-10V OND IC TOR UC 320 70 50 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1185 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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